Based on the DC analysis, small-signal high frequency characteristics of 4H-SiC BC MOSFET have been simulated using Sinusoidal Steady-State analysis approach by MEDICI. It can be clearly seen that the BC MOSFET is superior in high frequency field by the comparison with conventional MOSFET. 在直流分析的基础上,利用正弦稳态分析的方法对4H-SiC埋沟MOSFET的高频小信号特性进行了模拟,并与常规MOSFET进行对比,模拟结果显示了埋沟MOSFET在高频应用中的优越性。
The basic features of gate-insulator-covered type SIT are discussed in this paper, A nonlinear equivalent circuit model of SIT is developed on the basis of small-signal S parameters and static characteristics of SIT. 本文讨论了介质盖栅SIT的基本特性。在SIT小信号S参数和静态特性的基础上,得到了SIT非线性等效电路模型。
Theoretical Analysis of Small-Signal Modulation Characteristics of External-Cavity Semiconductor Lasers 外腔半导体激光器小信号调制性能的理论分析
The paper uses Time-Domain simulations and Small-Signal analysis to show that different load characteristics have different influences on system damping. 采用时域仿真与小扰动分析方法,分析不同的负荷特性对系统阻尼以及对PSS参数整定的影响;
The influence of the DC, AC small-signal and breakdown characteristics of the improved structures with the change of the FP length are simulated and discussed. 研究了场板长度的变化对器件的直流、交流小信号以及击穿特性所产生的影响。